It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXYA55N65B5

Name: IXYS IXYA55N65B5
Brand: IXYS
SKU: 747-IXYA55N65B5
Price: 5.98 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXYA55N65B5

Mfr. No:

IXYA55N65B5

Mfr.:

IXYS

Description:

IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXYA55N65B5 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXYA55N65B5

In Stock: 80

Stock:: 80

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 300

Expected 27/07/2026
Factory Lead Time:: 28

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€5.98	€5.98
	€4.37	€43.70
	€3.53	€353.00
	€3.14	€1,570.00
	€2.69	€2,690.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-263-2L
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.3 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	122 A
Pd - Power Dissipation:	395 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	122 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	50
Subcategory:	IGBTs
Tradename:	XPT

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXYA55N65B5 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Gen5 XPT IGBTs

IXYS Gen5 XPT IGBTs offer a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge. These transistors feature a low thermal resistance that simplifies thermal-related design issues. Gen5 IGBTs are available in three classes. Class A transistors are for low-speed devices and optimized for applications that require switching frequencies in the 0 to 5kHz range, while Class B transistors are for medium-speed devices and optimized for applications that require a frequency range of 5kHz to 30kHz. Finally, the Class C transistors are designed for high-speed devices and are suitable for applications requiring switching frequencies in the range of 20kHz to 60kHz. Applications for IXYS Gen5 XPT IGBTs include power inverters, PFC circuits, lamp ballasts, battery chargers, and welding machines.

AC/DC Power Supply

Littelfuse AC/DC Power Supply is a commonly used building block in electronic designs. The components in these power supply building blocks need to be reliable and long-lasting, and Littelfuse offers a range of products that fit those requirements. This portfolio of components covers overcurrent and overvoltage protection, the power stage, and output protection. Typical applications for Littelfuse AC/DC Power Supply products include automotive, solar, industrial, manufacturing, and more.

Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.