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IX4351NETR

Name: IXYS IX4351NETR
Brand: IXYS Integrated Circuits
SKU: 747-IX4351NETR
Price: 2.58 EUR
Availability: InStock

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Mouser No:

747-IX4351NETR

Mfr. No:

IX4351NETR

Mfr.:

IXYS Integrated Circuits

Description:

Gate Drivers 9A GATE DRIVERS LOW SIDE SIC

Datasheet:

IX4351NETR Datasheet (PDF)

ECAD Model:

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In Stock: 1,328

Stock:: 1,328 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1328 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€2.58	€2.58
	€1.94	€19.40
	€1.77	€44.25
	€1.53	€153.00
	€1.38	€345.00
	€1.31	€655.00
	€1.30	€1,300.00
Full Reel (Order in multiples of 2000)
	€1.29	€2,580.00

Alternative Packaging

Mfr. Part No.:

IX4351NE

Packaging:

Tube

Availability:

In Stock

Price:

€2.45

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	9 A
Supply Voltage - Min:	- 10 V
Supply Voltage - Max:	25 V
Rise Time:	10 ns
Fall Time:	10 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	IXYS Integrated Circuits
Product Type:	Gate Drivers
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	SiC

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Datasheet

IX4351NETR Datasheet (PDF)

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CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

IX4351NE 9A Low Side SiC MOSFET & IGBT Drivers

IXYS IX4351NE Low Side SiC MOSFET and IGBT Drivers have separate 9A source and sink outputs, allowing for custom turn-on and turn-off timing while minimizing switching losses. The IX4351NE offers an internal negative charge regulator that provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

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